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Premixed Gas Argon Fluoride , ArF Gas Mixtures 193nm Lithography
Description:
The most widespread industrial application of ArF excimer lasers has been in deep-ultraviolet photolithography for the manufacturing of microelectronic devices. From the early 1960s through the mid-1980s, Hg-Xe lamps had been used for lithography at 436, 405 and 365 nm wavelengths. However, with the semiconductor industry’s need for both finer resolution and higher production throughput, the lamp-based lithography tools were no longer able to meet the industry’s requirements.
This challenge was overcome when in a pioneering development in 1982, deep-UV excimer laser lithography was invented and demonstrated at IBM by K. Jain. With phenomenal advances made in equipment technology in the last two decades, today semiconductor electronic devices fabricated using excimer laser lithography total $400 billion in annual production. As a result, it is the semiconductor industry viewthat excimer laser lithography has been a crucial factor in the continued advance of the so-called Moore’s law.
From an even broader scientific and technological perspective, since the invention of the laser in 1960, the development of excimer laser lithography has been highlighted as one of the major milestones in the 50-year history of the laser.
Specifications:
1. Physical properties
| Commodity | Argon Fluoride gas |
| Molecular Formula | ArF |
| Phase | Gas |
| Color | Colorless |
| Hazardous class for transort | 2.2 |
2. Typical technical data (COA)
| Major Components | |||
| COMPONENTS | CONCENTRATION | RANGE | |
| Fluorine | 1.0% | 0.9-1.0% | |
| Argon | 3.5% | 3.4-3.6% | |
| Neon | Balance | ||
| Maxinum Impurities | |||
| COMPONENT | CONCENTRATION(ppmv) | ||
| Carbon Dioxide (CO2) | <5.0 | ||
| Carbon Monoxide (CO) | <1.0 | ||
| Carbon Tetrafluoride (CF4) | <2.0 | ||
| Carbonyl Fluoride (COF2) | <2.0 | ||
| Helium (He) | <8.0 | ||
| Moisture (H2O) | <25.0 | ||
| Nitrogen (N2) | <25.0 | ||
| Nitrogen Trifluoride (NF3) | <1.0 | ||
| Oxygen (O2) | <25.0 | ||
| Silicon Tetrafluoride (SiF4) | <2.0 | ||
| Sulfur Hexafluoride (SF6) | <1.0 | ||
| THC (as Methane) (CH4) | <1.0 | ||
| Xenon (Xe) | <10.0 | ||
3. Package
| Cylinder Specifications | Contents | Pressure | ||||
| Cylinder | Valve Outlet Options | Cubic Feet | Liters | PSIG | BAR | |
| 1 | CGA679 | DISS 728 | 265 | 7500 | 2000 | 139 |
| 2 | CGA679 | DISS 728 | 212 | 6000 | 2000 | 139 |
| 3 | CGA679 | DISS 728 | 71 | 2000 | 1800 | 125 |
Applications:
Argon Fluoride Mixtures are used in 193 nm lithography applications, usually in conjunction with an inert gas mixture.
